RMPA2265 - Dual Band WCDMA Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz
Fairchild (onsemi)
Description
The RMPA2265 power amplifier module (PAM) is designed for WCDMA applications in both the 1850
1910 and 1920
1980 MHz bands.
Features
a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using Fairchild’s InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process. Features.
Single positive-supply operation and low power and shutdown modes.
42% WCDMA efficiency at +28 dBm average output power 1920.
1980 MHz.
39% WCDMA efficiency at 27.5 dBm average output power 1850.
2.4-2.5 GHz and 5.15-5.85 GHz Dual Band InGaP HBT Linear Power Amplifier
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RMPA2265
December 2004
RMPA2265
Dual Band WCDMA Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz
General Description
The RMPA2265 power amplifier module (PAM) is designed for WCDMA applications in both the 1850–1910 and 1920– 1980 MHz bands. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using Fairchild’s InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process.
Features
• Single positive-supply operation and low power and shutdown modes • 42% WCDMA efficiency at +28 dBm average output power 1920–1980 MHz • 39% WCDMA efficiency at 27.
RMPA2265 Datasheet
