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RFD15P05 - P-Channel Power MOSFET

Features

  • 15A, 50V.
  • rDS(ON) = 0.150Ω.
  • Temperature Compensating PSPICE® Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE ©2002 Fairchild Semiconductor Corporation RFD15P05, RFD15P05SM, RFP15P05 Rev. B RFD15P.

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Full PDF Text Transcription

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RFD15P05, RFD15P05SM, RFP15P05 Data Sheet January 2002 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09833. Ordering Information PART NUMBER PACKAGE BRAND RFD15P05 TO-251AA D15P05 RFD15P05SM TO-252AA D15P05 RFP15P05 TO-220AB RFP15P05 NOTE: When ordering, use the entire part number.
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