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QSE213C - (QSE213C / QSE214C) Plastic Silicon Infrared Phototransistor

General Description

The QSE213C/QSE214C is a silicon phototransistor encapsulated in a medium angle, infrared transparent, clear thin plastic sidelooker package.

EMITTER 0.020 (0.51) SQ.

Key Features

  • NPN Silicon Phototransistor Package Type: Sidelooker Medium Reception Angle, 50° Daylight Filter Clean Epoxy Package Matching Emitter: QEE213.

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Datasheet Details

Part number QSE213C
Manufacturer Fairchild (onsemi)
File Size 440.32 KB
Description (QSE213C / QSE214C) Plastic Silicon Infrared Phototransistor
Datasheet download datasheet QSE213C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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QSE213C/QSE214C Plastic Silicon Infrared Phototransistor March 2006 QSE213C/QSE214C Plastic Silicon Infrared Phototransistor Features ■ ■ ■ ■ ■ ■ NPN Silicon Phototransistor Package Type: Sidelooker Medium Reception Angle, 50° Daylight Filter Clean Epoxy Package Matching Emitter: QEE213 Description The QSE213C/QSE214C is a silicon phototransistor encapsulated in a medium angle, infrared transparent, clear thin plastic sidelooker package. Package Dimensions 0.060 (1.50) 0.174 (4.44) R 0.030 (0.76) 0.047 (1.20) 0.224 (5.71) 0.177 (4.51) 0.030 (0.76) 0.5 (12.7) MIN EMITTER 0.020 (0.51) SQ. (2X) 0.100 (2.54) Schematic Collector Notes: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.