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PF8N60C - FQPF8N60C

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V.
  • Low gate charge ( typical 28 nC).
  • Low Crss ( typical 12 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability D ! GDS TO-220 FQP Series GD S TO-220F FQPF Series G!.
  • ◀▲.
  • ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Curren.

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Full PDF Text Transcription

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FQP8N60C/FQPF8N60C FQP8N60C/FQPF8N60C 600V N-Channel MOSFET QFET® General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features • 7.5A, 600V, RDS(on) = 1.
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