P18N50 - N-Channel UniFET MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V.
Low gate charge ( typical 45 nC).
Low Crss ( typical 25 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability UniFET.

Fairchild Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	P18N50
Manufacturer	Fairchild Semiconductor
File Size	859.05 KB
Description	N-Channel UniFET MOSFET
Datasheet	P18N50 Datasheet
Additional preview pages of the P18N50 datasheet.

📁 Similar Datasheet

P1800EA - Thyristor Surge Suppressors (RUILON)
P1800EA - Protection Thyristors (Littelfuse)
P1800EA - Thyristor Surge Suppressors (RuiLongYuan)
P1800EA - Thyristor Surge Suppressors (SOCAY)
P1800EAL - Thyristor Surge Suppressor (HUAAN)
P1800EB - Thyristor Surge Suppressors (RUILON)
P1800EB - Thyristor Surge Suppressors (RuiLongYuan)
P1800EB - Protection Thyristors (Littelfuse)
P1800EBL - Thyristor Surge Suppressor (HUAAN)
P1800EC - Thyristor Surge Suppressors (RUILON)

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text

FDP18N50 / FDPF18N50 500V N-Channel MOSFET April 2007 FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features • 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V • Low gate charge ( typical 45 nC) • Low Crss ( typical 25 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. www.DataSheet4U.

Published: Jul 11, 2011 |