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MOC8106M - Phototransistor Optocouplers

General Description

The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package.

Add option V (e.g., CNY17F2VM) File #102497 Current transfer ratio in select groups High BVCEO: 70V minimum (CNY1

Key Features

  • UL recognized (File # E90700, Vol. 2).
  • VDE recognized.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers November 2009 CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M, MOC8107M Phototransistor Optocouplers Features ■ UL recognized (File # E90700, Vol. 2) ■ VDE recognized Description The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. ■ ■ ■ ■ – Add option V (e.g., CNY17F2VM) – File #102497 Current transfer ratio in select groups High BVCEO: 70V minimum (CNY17XM, CNY17FXM, MOC810XM) Closely matched current transfer ratio (CTR) minimizes unit-to-unit variation.