MBR1560CT
Features
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Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guarding for over voltage protection.
PIN 1 + PIN 3 CASE PIN 2
1 2 3
TO-220AB
Schottky Rectifiers
Absolute Maximum Ratings-
Symbol
VRRM IF(AV) IFSM Tstg TJ
TA = 25°C unless otherwise noted
Parameter
1535 Maximum Repetitive Reverse Voltage Average Rectified Forward Current .375 " lead length @ TA = 105°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 35
Value
1545 45 15 150 -65 to +175 -65 to +150 1550 50 1560 60
Units
V A A °C °C
- These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD RθJA RθJL Power Dissipation Thermal Resistance,...
