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LED55B - GaAs INFRARED EMITTING DIODE

Description

The LED55B/LED55C/LED56 are 940 nm LEDs in a narrow angle, TO-46 package.

Features

  • Good optical to mechanical alignment.
  • Mechanically and wavelength matched to the TO-18 series phototransistor.
  • Hermetically sealed package.
  • High irradiance level  2001 Fairchild Semiconductor Corporation DS300312 6/05/01 1 OF 4 www. fairchildsemi. com GaAs.

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Other Datasheets by Fairchild (onsemi)

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LED55BF GaAs INFRARED EMITTING DIODE
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAs INFRARED EMITTING DIODE LED55B PACKAGE DIMENSIONS 0.209 (5.31) 0.184 (4.67) LED55C LED56 0.030 (0.76) NOM 0.255 (6.48) 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) SCHEMATIC 1 0.040 (1.02) 0.040 (1.02) 45° Ø0.020 (0.51) 2X 3 ANODE (Connected To Case) CATHODE 3 NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. 1 DESCRIPTION The LED55B/LED55C/LED56 are 940 nm LEDs in a narrow angle, TO-46 package. FEATURES • Good optical to mechanical alignment • Mechanically and wavelength matched to the TO-18 series phototransistor • Hermetically sealed package • High irradiance level  2001 Fairchild Semiconductor Corporation DS300312 6/05/01 1 OF 4 www.fairchildsemi.
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