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KST11 - NPN EPITAXIAL SILICON TRANSISTOR

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KST10/11 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSITOR TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-...

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C) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (TA=25°C) Derate above 25°C Collector Dissipation (TA=25°C) Derate above 25°C Junction Temperature Storage Temperature Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient VCBO VCEO VEBO PC PC TJ TSTG Rth(j-c) Rth(j-a) 30 25 3.0 350 2.8 1.0 8.0 150 -55~150 125 357 V V V mW mW/°C W W/°C °C °C °C/W °C/W 1. Emitter 2. Base 3.