Full PDF Text Transcription for KSE3055T (Reference)
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KSE3055T. For precise diagrams, and layout, please refer to the original PDF.
KSE3055T KSE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.) 1 TO-220 2.Co...
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• High Current Gain-Bandwidth Product : fT = 2MHz (Min.) 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector -Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 70 60 5 10 6 75 0.