Datasheet4U Logo Datasheet4U.com

ISL9K860P3 - 8A/ 600V Stealth Dual Diode

Description

The ISL9K860P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications.

The Stealth™ family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions.

Features

  • Soft Recovery.
  • tb / ta > 2.5.
  • Fast Recovery.
  • trr < 25ns.
  • Operating Temperature.
  • 175oC.
  • Reverse Voltage.
  • . . 600V.
  • Avalanche Energy Rated.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ISL9000 Dual LDO Renesas
ISL9000A Dual LDO Renesas
ISL9000AM Dual LDO Intersil
ISL9001 LDO Renesas
ISL9001A LDO Renesas

Other Datasheets by Fairchild (onsemi)

Part Number Description
ISL9K8120P3 8A/ 1200V Stealth Dual Diode
ISL9K1560G3 15A/ 600V Stealth Dual Diode
ISL9K18120G3 18A/ 1200V Stealth Dual Diode
ISL9K30120G3 30A/ 1200V Stealth Dual Diode
ISL9K3060G3 30A/ 600V Stealth Dual Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ISL9K860P3 April 2002 ISL9K860P3 8A, 600V Stealth™ Dual Diode General Description The ISL9K860P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry.
Published: |