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IRFI614B - N-Channel MOSFET

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Fairchild Semiconductor

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IRFI614B N-Channel MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – IRFI614B

Datasheet Details

Part number	IRFI614B
Manufacturer	Fairchild Semiconductor
File Size	671.95 KB
Description	N-Channel MOSFET
Datasheet	IRFI614B Datasheet
Note	This datasheet PDF includes multiple part numbers: IRFI614B, IRFW614B. Please refer to the document for exact specifications by model.
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Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Features

2.8A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
◀ ▲.
G! G S D2-PAK IRFW Series G D S I2-PAK IRFI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continu.

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Published: Dec 2, 2013 |