IRF654A
FEATURES
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current : 10 µA (Max.) @ VDS = 250V
- Low RDS(ON) : 0.108 Ω (Typ.)
BVDSS = 250 V RDS(on) = 0.14 Ω ID = 21 A
TO-220
1 2 3
..
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds
(2) (1) (1) (3) (1)
Value 250 21 13.3 84 ±30 551 21 15.6 4.8 156 1.25
- 55 to +150
Units V A A V m J A m J V/ns W W/°C
°C 300
Thermal Resistance
Symbol...
