IRF640A - Advanced Power MOSFET

Product Overview

Fairchild Semiconductor

Part number	IRF640A
Manufacturer	Fairchild Semiconductor
File Size	260.95 KB
Description	Advanced Power MOSFET
Datasheet	IRF640A Datasheet
Additional preview pages of the IRF640A datasheet.

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V Lower RDS(ON) : 0.144 Ω(Typ. ) 1 2 3 IRF640A BVDSS = 200 V RDS(on) = 0.18 Ω ID = 18 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain.

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Published: Apr 16, 2005 |