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HUF76407P3 - N-Channel MOSFET

Features

  • Ultra Low On-Resistance - rDS(ON) = 0.092Ω, VGS = 10V - rDS(ON) = 0.107Ω, VGS = 5V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve DRAIN (FLANGE) HUF76407P3 Symbol D.
  • UIS Rating Curve.
  • Switching Time vs RGS Curves G Ordering Information S PART NUMBER HUF76407P3.

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Full PDF Text Transcription

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HUF76407P3 Data Sheet December 2001 12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.092Ω, VGS = 10V - rDS(ON) = 0.107Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve DRAIN (FLANGE) HUF76407P3 Symbol D • UIS Rating Curve • Switching Time vs RGS Curves G Ordering Information S PART NUMBER HUF76407P3 PACKAGE TO-220AB BRAND 76407P NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF76407P3 UNITS V V V A A A A 60 60 ±16 12 13 6 6 Figure 4 Figures 6, 17, 18 38 0.
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