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HUF76131SK8 - N-Channel MOSFET

Features

  • Logic Level Gate Drive.
  • 10A, 30V.
  • Ultra Low On-Resistance, rDS(ON) = 0.013Ω.
  • Temperature Compensating PSPICE® Model.
  • Thermal Impedance SPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol SOURCE(1) DRAIN(8) Ordering Information PART NUMBER HUF76131SK8.

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Other Datasheets by Fairchild (onsemi)

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Full PDF Text Transcription

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HUF76131SK8 Data Sheet January 2003 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is ® manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA76131.
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