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HUF75344A3 - N-Channel UltraFET Power MOSFET

Datasheet Summary

Description

This N-channel power MOSFET is produced using Fairchild Semiconductor’s innovative UItraFET process.

This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.

Features

  • RDS(on) = 6.5mΩ ( Typ. )@ VGS = 10V, ID = 75A.
  • RoHS compliant.

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Datasheet Details

Part number HUF75344A3
Manufacturer Fairchild Semiconductor
File Size 418.18 KB
Description N-Channel UltraFET Power MOSFET
Datasheet download datasheet HUF75344A3 Datasheet
Additional preview pages of the HUF75344A3 datasheet.

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Full PDF Text Transcription

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HUF75344A3 N-Channel UltraFET Power MOSFET October 2007 HUF75344A3 N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ tm Features • RDS(on) = 6.5mΩ ( Typ.)@ VGS = 10V, ID = 75A • RoHS compliant Description • This N-channel power MOSFET is produced using Fairchild Semiconductor’s innovative UItraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored change.
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