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H11G1 - HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS

Description

The H11GX series are photodarlington-type optically coupled optocouplers.

These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.

Features

  • High BVCEO - Minimum 100 V for H11G1 - Minimum 80 V for H11G2 - Minimum 55 V for H11G3.
  • High sensitivity to low input current Minimum 500 percent CTR at IF = 1 mA.
  • Low leakage current at elevated temperature (maximum 100 µA at 80°C).
  • Underwriters Laboratory (UL) recognized File# E90700.

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Other Datasheets by Fairchild (onsemi)

Part Number Description
H11G2 HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS
H11G3 HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS
H11A1 GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
H11A2 GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
H11A3 GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

Full PDF Text Transcription

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HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
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