G5N120BND Datasheet HGTG5N120BND

Manufacturer: Fairchild (now onsemi)

G5N120BND hgtg5n120bnd by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	G5N120BND
Manufacturer	Fairchild (now onsemi)
File Size	233.09 KB
Description	HGTG5N120BND
Datasheet	G5N120BND Datasheet

Overview

HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are NonPunch Through (NPT) IGBT designs.

They are new members of the MOS gated high voltage switching IGBT family.

Key Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high voltage switching.

More Datasheets from Fairchild (now onsemi)

Part Number	Description