G30N60B3D Datasheet N-Channel IGBT

Manufacturer: Fairchild (now onsemi)

G30N60B3D n-channel igbt by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	G30N60B3D
Manufacturer	Fairchild (now onsemi)
File Size	264.05 KB
Description	N-Channel IGBT
Datasheet	G30N60B3D Datasheet

Overview

HGTG30N60B3D Data Sheet www.DataSheet4U.com April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the.

Key Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching.

More Datasheets from Fairchild (now onsemi)

Part Number	Description
G30N60B3	NPT IGBT
G30N60A4D	SMPS Series N-Channel IGBT