G18N120BN
features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays .. and contactors. Formerly Developmental Type TA49288.
Features
- 54A, 1200V, TC = 25o C
- 1200V Switching SOA Capability
- Typical Fall Time
- -
- . 140ns at TJ = 150o C
- Short Circuit Rating
- Low Conduction Loss
- Avalanche Rated
- Temperature pensating SABER™ Model .fairchildsemi.
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER HGTG18N120BN PACKAGE TO-247 BRAND G18N120BN
NOTE: When ordering, use the entire part number.
Symbol
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195...
