G12N60C3D Datasheet HGTG12N60C3D

Manufacturer: Fairchild (now onsemi)

G12N60C3D hgtg12n60c3d by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	G12N60C3D
Manufacturer	Fairchild (now onsemi)
File Size	161.71 KB
Description	HGTG12N60C3D
Download	G12N60C3D Download (PDF)

Overview

HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a MOS gated high voltage switching device combining the.

Key Features

of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti parallel with the IGBT is the development type TA49061. The IGBT is ideal for many high voltage switching.

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