FQPF27P06 Datasheet 60V P-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

FQPF27P06 60v p-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FQPF27P06
Manufacturer	Fairchild (now onsemi)
File Size	730.12 KB
Description	60V P-Channel MOSFET
Datasheet	FQPF27P06 Datasheet

General Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Overview

FQPF27P06 P-Channel MOSFET FQPF27P06 P-Channel QFET® MOSFET -60 V, -17 A, 26 mΩ March.

Key Features

-17 A, -60 V, RDS(on)=26 mΩ(Max. ) @VGS=-10 V, ID=-8.5 A.
Low Gate Charge (Typ. 33 nC).
Low Crss (Typ. 120 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating GD S TO-220F G! Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-So.

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