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FQPF13N10 Datasheet 100V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

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General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Overview

FQPF13N10 January 2001 QFET FQPF13N10 100V N-Channel MOSFET General.

Key Features

  • 8.7A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C).

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