FQPF12N60C
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
Features
- 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, ID = 6 A
- Low Gate Charge (Typ. 48 n C)
- Low Crss (Typ. 21 p F)
- 100% Avalanche Tested
GDS TO-220F
Absolute Maximum Ratings TC = 25o C unless otherwise noted.
Symbol
Parameter
VDSS ID
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C)
- Continuous (TC...
