FQP6N40C - 400V N-Channel MOSFET

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Fairchild Semiconductor

Part number	FQP6N40C
Manufacturer	Fairchild Semiconductor
File Size	1.17 MB
Description	400V N-Channel MOSFET
Datasheet	FQP6N40C Datasheet
Additional preview pages of the FQP6N40C datasheet.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

6.0 A, 400 V, RDS(on) = 1.0 Ω (Max. ) @ VGS = 10 V, ID = 3 A.
Low Gate Charge (Typ. 16 nC).
Low Crss (Typ. 15 pF).
100% Avalanche Tested D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Volt.

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Published: Apr 1, 2005 |