FQI19N20C - 200V N-Channel MOSFET

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Fairchild Semiconductor

Part number	FQI19N20C
Manufacturer	Fairchild Semiconductor
File Size	901.97 KB
Description	200V N-Channel MOSFET
Datasheet	FQI19N20C Datasheet
Additional preview pages of the FQI19N20C datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

19.0A, 200V, RDS(on) = 0.17Ω @VGS = 10 V Low gate charge ( typical 40.5 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ◀ {.
G S D2-PAK FQB Series I2-PAK G D S FQI Series G{ ▲.
{ S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Curr.

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Published: Apr 29, 2010 |