FQD6N40C
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.
Features
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- - 4.5A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V Low gate charge ( typical 16n C) Low Crss ( typical 15p F) Fast switching 100% avalanche tested Improved dv/dt capability
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D-PAK
FQD Series
I-PAK
FQU Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage
- Continuous (TC = 25°C) Drain Current
- Continuous (TC = 100°C) Drain Current
- Pulsed
(Note 1)
FQD6N40C /...
