FQD60N03L
Description
This device employs advanced MOSFET technology and features low gate charge while maintaining low onresistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
- Fast switching
- r DS(ON) = 0.014 Ω (Typ), V GS = 10V
- r DS(ON) = 0.024 Ω (Typ), V GS = 4.5V
- Qg (Typ) = 9.6n C, V GS = 5V
- Qgd (Typ) = 3.4n C
- C ISS (Typ) = 900p F
Applications
- DC/DC converters
DRAIN (FLANGE) GATE G SOURCE
TO-252AA
FDD SERIES
MOSFET Maximum Ratings T C=25°C unless otherwise noted
Symbol V DSS V GS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (T C = 25 o C, V GS = 10V) ID Continuous (T C = 100 o C, V GS = 4.5V) Continuous (T C = 25 o C, V GS = 10V, R θJA = 52 o C/W) Pulsed PD TJ, T STG Power dissipation Derate above 25 o C Operating and Storage Temperature 30 19 7.9 Figure 4 45 0.37 -55 to 150 A A A A W W/ o C o C
Ratings 30 ±...
