FQD5P10 - 100V P-Channel MOSFET

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Fairchild Semiconductor

Part number	FQD5P10
Manufacturer	Fairchild Semiconductor
File Size	451.89 KB
Description	100V P-Channel MOSFET
Datasheet	FQD5P10 Datasheet
Additional preview pages of the FQD5P10 datasheet.

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

-3.6 A, -100 V, RDS(on) = 1.05 (Max. )@ VGS = -10 V, ID = 1.8 A.
Low Gate Charge (Typ. 6.3 nC).
Low Crss (Typ. 18 pF).
100% avalanche tested D G G S D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy.

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Published: Apr 1, 2005 |