FQD45N03L
Description
This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
- Fast switching
- r DS(ON) = 0.018Ω (Typ), VGS = 10V
- r DS(ON) = 0.028Ω (Typ), VGS = 5V
- Qg (Typ) = 9n C, VGS = 5V
- Qgd (Typ) =3n C
- CISS (Typ) =970p F
Applications
- DC/DC converters
DRAIN (FLANGE)
GATE SOURCE
TO-252 MOSFET Maximum Ratings TC=25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) ID Continuous (TC = 100o C, VGS = 4.5V) Continuous (TC = 25o C, VGS = 10V, Rθ JA=52o C) Pulsed PD TJ, TSTG Power dissipation Derate above 25o C Operating and Storage Temperature 20 20 8 Figure 4 41 0.33 -55 to 150 Ratings 30 ±20
Units V V A A A A W W/o C o
Thermal Characteristics
RθJC RθJA RθJA...
