FQB5N80 - 800V N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQB5N80
Manufacturer	Fairchild Semiconductor
File Size	670.78 KB
Description	800V N-Channel MOSFET
Datasheet	FQB5N80 Datasheet
Additional preview pages of the FQB5N80 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

4.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Apr 1, 2005 |