FQB55N06 - 60V N-Channel MOSFET

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Fairchild Semiconductor

Part number	FQB55N06
Manufacturer	Fairchild Semiconductor
File Size	601.09 KB
Description	60V N-Channel MOSFET
Datasheet	FQB55N06 Datasheet
Additional preview pages of the FQB55N06 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

55A, 60V, RDS(on) = 0.020Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (.

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Published: Apr 1, 2005 |