FQB2N80 - 800V N-Channel MOSFET

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Fairchild Semiconductor

Part number	FQB2N80
Manufacturer	Fairchild Semiconductor
File Size	659.15 KB
Description	800V N-Channel MOSFET
Datasheet	FQB2N80 Datasheet
Additional preview pages of the FQB2N80 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

2.4A, 800V, RDS(on) = 6.3Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 10.

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Published: Apr 1, 2005 |