FQB15P12 - 120V P-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQB15P12
Manufacturer	Fairchild Semiconductor
File Size	652.31 KB
Description	120V P-Channel MOSFET
Datasheet	FQB15P12 Datasheet
Additional preview pages of the FQB15P12 datasheet.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

-15A, -120V, RDS(on) = 0.2Ω @VGS = -10 V.
Low gate charge ( typical 29 nC).
Low Crss ( typical 110 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
175°C maximum junction temperature rating D GS D2-PAK FQB Series GDS I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Contin.

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Published: Nov 30, 2024 |