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FMBL1G200US60 - Molding Type Module

General Description

Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness.

Key Features

  • UL Certified No. E209204 Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 200A High input impedance Fast & soft anti-parallel FWD Package Code : 7PM-BB E1/C2.

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Full PDF Text Transcription for FMBL1G200US60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FMBL1G200US60. For precise diagrams, and layout, please refer to the original PDF.

FMBL1G200US60 July 2001 IGBT FMBL1G200US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conducti...

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ated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • • • UL Certified No. E209204 Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.

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