FJPF2145 Datasheet Text
FJPF2145
- ESBC™ Rated NPN Power Transistor
April 2013
FJPF2145 ESBC™ Rated NPN Power Transistor
ESBC Features
(FDC655 MOSFET)
VCS(ON) 0.21 V
IC Equiv. RCS(ON)(1) 2 A 0.105 Ω
- Low Equivalent On Resistance
- Very Fast Switch: 150 kHz
- Wide RBSOA: Up to 1100 V
- Avalanche Rated
- Low Driving Capacitance, no Miller Capacitance
- Low Switching Losses
- Reliable HV Switch: No False Triggering due to
High dv/dt Transients
Applications
- High-Voltage, High-Speed Power Switches
- Emitter-Switched Bipolar/MOSFET Cascode
(ESBC™)
- Smart Meters, Smart Breakers, SMPS,
HV Industrial Power Supplies
- Motor Drivers and Ignition Drivers
Description
The FJPF2145 is a low-cost, high-performance power switch designed to provide the best performance when used in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1100 volts and up to 5 amps, while providing exceptionally low on-resistance and very low switching losses.
The ESBC™ switch can be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that bines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance.
The FJPF2145 provides exceptional reliability and a large operating range due to its square reverse-bias-safe-operating-area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures.
The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in a highvoltage TO-220F package.
1 TO-220F 1.Base 2.Collector 3.Emitter Figure 1. Pin...