FJP2160D Datasheet Text
FJP2160D
- ESBCTTMM Rated NPN Silicon Transistor
FJP2160D ESBCTM Rated NPN Silicon Transistor
May 2012
Applications
- High Voltage and High Speed Power Switch Application
- Emitter-Switched Bipolar/MOSFET Cascode Application (ESBCTM)
- Smart Meter, Smart Breakers, HV Industrial Power Supplies
- Motor Driver and Ignition Driver
ESBC Features
(FDC655 MOSFET)
VCS(ON) 0.131 V
IC 0.5 A
Equiv RCS(ON) 0.261 Ω ∗
- Low Equivalent On Resistance
- Very Fast Switch : 150KHz
- Squared RBSOA : Up to 1600Volts
- Avalanche Rated
- Low Driving Capacitance, no Miller Capacitance
(Typ 12pF Cap @ 200volts)
- Low Switching Losses
- Reliable HV switch : No False Triggering due to
High dv/dt Transients.
Description
The FJP2160D is a low-cost, high performance power switch designed to provide the best performance when used in an ESBCTM configuration in applications such as: power supplies, motor drivers, Smart Grid, or ignition switches. The power switch is designed to operate up to 1600 volts and up to 3amps while providing exceptionally low on-resistance and very low switching losses.
The ESBCTM switch is designed to be easy to drive using off-the-shelf power supply controllers or drivers. The ESBCTM MOSFET is a low-voltage, low-cost, surface mount device that bines low-input capacitance and fast switching, The ESBCTM configuration further minimizes the required driving power because it does not have Miller capacitance.
The FJP2160D provides exceptional reliability and a large operating range due to its square reverse-bias-safeoperating-area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors so is not prone to static dv/dt failures.
1 TO-220 1.Base 2.Collector 3.Emitter
C (2)
(1) B...