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FGA40T65SHDF - IGBT

General Description

Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer superior conduction and switching performance and easy parallel operation.

This device is well suited for the resonant or soft switching application such as induction heating and MWO.

Key Features

  • Maximum Junction Temperature : TJ = 175oC.
  • Positive Temperature Co-efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.45 V ( Typ. ) @ IC = 40 A.
  • 100% of the Parts tested for ILM(1).
  • High Input Impedance.
  • Fast Switching.
  • Tighten Parameter Distribution.
  • RoHS Compliant General.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FGA40T65SHD IGBT
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FGA4060ADF Field Stop Trench IGBT
FGA40N60UFD Ultrafast IGBT
FGA40N65SMD 40A Field Stop IGBT
FGA40S65SH IGBT
FGA120N30D 300V PDP IGBT
FGA15N120AN NPT Igbt
FGA15N120AND IGBT
FGA15N120ANTD 1200V NPT Trench IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FGA40T65SHDF — 650 V, 40 A Field Stop Trench IGBT FGA40T65SHDF 650 V, 40 A Field Stop Trench IGBT April 2015 Features • Maximum Junction Temperature : TJ = 175oC • Positive Temperature Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.45 V ( Typ.) @ IC = 40 A • 100% of the Parts tested for ILM(1) • High Input Impedance • Fast Switching • Tighten Parameter Distribution • RoHS Compliant General Description Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO.