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FFP08H60S - 8A 600V Hyperfast-2 Diode

General Description

The FFP08H60S is a hyperfast II diode and silicon nitride passivated ion-implanted epitaxial planar construction.

This device is intended for use as freewheeling/clamping diodes in a variety of switching power supplies and other power switching applications.

Key Features

  • Hyperfast Recovery trr = 45 ns (@ IF = 8 A).
  • Max Forward Voltage, VF = 2.6 V (@ TC = 25°C).
  • 600 V Reverse Voltage and High Reliability.
  • Avalanche Energy Rated.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FFP08H60S — Hyperfast II Diode October 2018 FFP08H60S 8 A, 600 V, Hyperfast II Diode Features • Hyperfast Recovery trr = 45 ns (@ IF = 8 A) • Max Forward Voltage, VF = 2.6 V (@ TC = 25°C) • 600 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant Applications • General Purpose • SMPS, Power Switching Circuits • Free-Wheeling Diode for Motor Application Pin Assignments Description The FFP08H60S is a hyperfast II diode and silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling/clamping diodes in a variety of switching power supplies and other power switching applications.