FDV305N
Description
This 20V N-Channel MOSFET uses Fairchild’s high voltage Power Trench process. It has been optimized for power management applications.
Features
- 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V
- Low gate charge
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
Applications
- -
- Load switch Battery protection Power management
SOT-23
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed Maximum Power Dissipation
TA=25o C unless otherwise noted
Parameter
Ratings
20 ± 12 0.9 2 0.35
- 55 to +150
Units
V V A W °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W
Package Marking and Ordering Information
Device Marking 305 Device FDV305N Reel Size 7’’ Tape width 8mm Quantity 3000 units
2003 Fairchild Semiconductor Corporation
FDV305N...
