FDS8960C - Dual N & P-Channel PowerTrench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDS8960C
Manufacturer	Fairchild Semiconductor
File Size	201.21 KB
Description	Dual N & P-Channel PowerTrench MOSFET
Datasheet	FDS8960C Datasheet
Additional preview pages of the FDS8960C datasheet.

Product details

Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.

Features

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Q1: N-Channel RDS(on) = 0.024Ω @ VGS = 10V RDS(on) = 0.032Ω @ VGS = 4.5V.
Q2: P-Channel RDS(on) = 0.053Ω @ VGS =.
10V RDS(on) = 0.087Ω @ VGS =.
4.5V Fast switching speed RoHS compliant 7.0A, 35V.
5A,.
35V D1 D D1 D DD2 D2 D 5 6 7 Q2 4 3 Q1 2 1 SO-8 Pin 1 SO-8 G2 S2 G G1 S S1 S 8 S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25°C unless otherwise noted Parameter Q1 35.

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Published: Feb 22, 2007 |