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FDS6990AS - MOSFET

General Description

The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

Key Features

  • 7.5 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 28 mΩ @ VGS = 4.5 V.
  • Includes SyncFET Schottky diode.
  • Low gate charge (10nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™ M FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™ March 2010 Features ■ 7.5 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 28 mΩ @ VGS = 4.5 V ■ Includes SyncFET Schottky diode ■ Low gate charge (10nC typical) ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability Applications ■ DC/DC converter ■ Motor drives General Description The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. Each MOSFET includes integrated Schottky diodes using Fairchild’s monolithic SyncFET technology.