FDS4675
Description
This P -Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.
Key Features
- 11 A, –40 V RDS(ON) = 0.013 Ω @ V GS = –10 V RDS(ON) = 0.017 Ω @ V GS = –4.5 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
Applications
- Power management
