FDR856P - P-Channel MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDR856P
Manufacturer	Fairchild Semiconductor
File Size	223.77 KB
Description	P-Channel MOSFET
Datasheet	FDR856P Datasheet
Additional preview pages of the FDR856P datasheet.

Product details

Description

SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

- 6.3 A, -30 V, RDS(ON) =0.025 Ω @ VGS = -10 V RDS(ON) =0.040 Ω @ VGS = -4.5 V. SuperSOTTM-8 package: small footprint (40% less than SO-8);low profile (1mm thick);maximum power comperable to SO-8. High density cell design for extremely low RDS(ON). SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D S S 6 85 P G 5 6 4 3 2 1 pin 1 SuperSOT TM-8 D D D 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage TA = 25oC unless other wise noted FDR85.

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Published: Mar 30, 2005 |