FDR6580 - N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDR6580
Manufacturer	Fairchild Semiconductor
File Size	241.41 KB
Description	N-Channel MOSFET
Datasheet	FDR6580 Datasheet
Additional preview pages of the FDR6580 datasheet.

Product details

Description

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

11 A, 20 V. RDS(ON) = 0.009 Ω @ VGS = 4.5 V RDS(ON) = 0.013 Ω @ VGS = 2.5 V. Low gate charge. High performance trench technology for extremely low RDS(ON). Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8.

📁 Similar Datasheet

FDRW30S120J - Diode (Fuji)
FDRW35S60L - Ultrafast Rectifier (INCHANGE)
FDRW60C120J - Diode (Fuji)

Other Datasheets by Fairchild Semiconductor

FDR6674A - N-Channel MOSFET
FDR6678A - N-Channel MOSFET
FDR4410 - N-Channel MOSFET
FDR4420A - N-Channel MOSFET
FDR8305N - N-Channel MOSFET
FDR8308P - P-Channel MOSFET

Published: Mar 30, 2005 |