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FDP5800 Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Applications • Power Tools • Motor Drives and Uninterruptible Power Supplies • Synchronous Rectification • Battery Protection Circuit D GDS TO-220 G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted.

Symbol Parameter VDSS VGSS ID IDM EAS PD Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Continuous (TA = 25oC) - Pulsed Single Pulsed Avalanche Energy Power Dissipation (TC = 25oC) - Derate Above 25oC TJ, TSTG Operating and Storage Temperature Range *Drain current limited by package.

Overview

FDP5800 — N-Channel Logic Level PowerTrench® MOSFET December 2013 FDP5800 N-Channel Logic Level PowerTrench® MOSFET 60 V, 80 A, 6.

Key Features

  • RDS(on) = 4.6 mΩ (Typ. ) @ VGS = 10 V, ID = 80 A.
  • High Performance Trench Technology for Extermly Low RDS(on).
  • Low Gate Charge.
  • High Power and Current Handing Capability.
  • RoHS Compliant.