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FDP55N06 Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Download the FDP55N06 datasheet PDF. This datasheet also includes the FDPF55N06 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (FDPF55N06_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Overview

www.DataSheet4U.com FDP55N06/FDPF55N06 60V N-Channel MOSFET UniFET FDP55N06/FDPF55N06 60V N-Channel.

Key Features

  • 55A, 60V, RDS(on) = 0.022 Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM.