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FDMS86369_F085 - MOSFET

Key Features

  • Typical RDS(on) = 5.9 mΩ at VGS = 10V, ID = 65 A.
  • Typical Qg(tot) = 35 nC at VGS = 10V, ID = 65 A.
  • UIS Capability.
  • RoHS Compliant.
  • Qualified to AEC Q101.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS86369_F085 N-Channel PowerTrench® MOSFET FDMS86369_F085 N-Channel PowerTrench® MOSFET 80 V, 65 A, 7.5 mΩ March 2015 Features „ Typical RDS(on) = 5.9 mΩ at VGS = 10V, ID = 65 A „ Typical Qg(tot) = 35 nC at VGS = 10V, ID = 65 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Integrated Starter/Alternator „ Primary Switch for 12V Systems For current package drawing, please refer to the Fairchild web‐ site  at  https://www.fairchildsemi.com/package‐drawings/PQ/ PQFN08M.pdf MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.