FDMC6890NZ Datasheet | Fairchild Semiconductor

.. FDMC6890NZ Dual N-Channel PowerTrench® MOSFET October 2006 FDMC6890NZ Dual N-Channel PowerTrench® MOSFET 20V, 4A, Q1:68mΩ, Q2:100mΩ Features Q1: N-Channel - Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 4A - Max rDS(on) = 100mΩ at VGS = 2.5V, ID = 3A Q2: N-Channel - Max rDS(on) = 100mΩ at VGS = 4.5V, ID = 4A - Max rDS(on) = 150mΩ at VGS = 2.5V, ID = 2A - Low gate Charge - RoHS pliant tm General Description FDMC6890NZ is a pact single package solution for DC to DC converters with excellent thermal and switching characteristics. Inside the Power 33 package Features two N-channel MOSFETs with low on-state resistance and low gate charge to maximize the power conversion and switching efficiency. The Q1 switch also integrates gate protection from unclamped voltage input. Application - DC - DC Conversion Up S1 D1/S2 D2 Bottom G1 D1/S2 G2 D2 4 3 G2 D1 D2 D1/S2 5 S1 2 D1/S2 G1 G1 D1/S2 G2 Power 33 S1 D1/S2 D2 6 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation (Steady State) Q1 Power Dissipation (Steady State) Q2 Operating and Storage Junction Temperature Range (Note 1a) Q1 20 ±12 4 10 1.92 1.78 -55 to +150 Q2 20 ±12 Units V V A W °C...